In situ growth of oxide and silicon layers

ABSTRACT

A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.10/293,795, filed Nov. 12, 2002, which is a continuation of applicationSer. No. 09/227,679, filed Jan. 8, 1999 (now U.S. Pat. No. 6,749,687),which claims the priority benefit of U.S. Provisional Application No.60/070,991, filed Jan. 9, 1998.

FIELD OF THE INVENTION

The present invention relates to forming oxide and silicon layers withina single semiconductor processing chamber, and more particularly tothermal oxidation within a single-wafer epitaxial silicon depositionchamber.

BACKGROUND OF THE INVENTION

High-temperature ovens, called reactors, are used to create structuresof very fine dimensions, such as integrated circuits on semiconductorsubstrates. One or more substrates, such as silicon wafers, are placedon a wafer support inside the reaction chamber. Both the wafer andsupport are heated to a desired temperature. In a typical wafertreatment step, reactant gases are passed over the heated wafer, causingthe chemical vapor deposition (CVD) of a thin layer of the reactantmaterial on the wafer. Various process conditions, particularlytemperature uniformity and reactant gas distribution, must be carefullycontrolled to ensure the high quality of the resulting layers.

Through a series of deposition, doping, photolithography and etch steps,the starting substrate and the subsequent layers are converted intointegrated circuits, with a single layer producing from tens tothousands or even millions of integrated devices, depending on the sizeof the wafer and the complexity of the circuits.

Batch processors have traditionally been employed in the semiconductorindustry to allow multiple wafers to be processed simultaneously, thuseconomically presenting low processing times and costs per wafer. Recentadvances in miniaturization and attendant circuit density, however, havelowered tolerances for imperfections in semiconductor processing.Accordingly, single wafer processing reactors have been developed forimproved control of deposition conditions.

Among other process parameters, single wafer processing has greatlyimproved temperature and gas flow distribution across the wafer. Inexchange for greater process control, however, processing time hasbecome even more critical than with batch systems. Every second added toprocessing times must be multiplied by the number of wafers beingprocessed serially, one at a time, through the same single-waferprocessing chamber. Conversely, any improvements in wafer throughput cantranslate to significant fabrication cost savings.

One process for which process control is particularly critical, and forwhich single wafer processing is particularly useful, is the formationof epitaxial layers. If the deposited layer has the samecrystallographic structure as the underlying silicon wafer, it is calledan epitaxial layer. Through careful control of deposition conditions,reactant gases are passed over a heated substrate such that thedeposited species precipitates in conformity with the underlying crystalstructure, which is thus extended into the growing layer. As is known inthe art, epitaxial layers can be formed of intrinsic or doped silicon,silicon germanium, or other semiconductor materials. The lowest level ofdevices, including transistors, are often formed within an epitaxiallayer formed over a semiconductor substrate.

Because integrated devices are formed within the epitaxial layer, it isimportant that the epitaxial layer maintain a pure crystal structure,free of contamination which could affect device operation. The purityand crystalline structure of the underlying substrate (or other baselayer) prior to epitaxial deposition is one factor affecting theresultant epitaxial layer. Contaminants at the substrate surface caninterfere with the crystal structure of the epitaxial layer, or with theelectrical properties of devices made out of the epitaxial layer.Similarly, crystal dislocations in the underlying layer are propagatedthrough the growing epitaxial layer. Of course, contamination of theepitaxial layer after formation can also critically affect electricalcharacteristics of the devices formed therein.

A need exists, therefore, for methods of purifying substrate surfacesprior to chemical vapor deposition, and of maintaining the purity of adeposited layer after formation. Desirably, such methods should becompatible with single-wafer, epitaxial silicon deposition chamberswithout increasing system costs or reducing wafer throughput.

SUMMARY OF THE INVENTION

These and other needs are satisfied by several aspects of the presentinvention.

In accordance with one aspect of the present invention, an atmosphericsilicon deposition reactor includes a single-substrate reaction chamber.A reaction gas inlet and an outlet of the chamber define a gas flow pathbetween them. A support is included for supporting a substrate withinthe gas flow path. The reactor includes a source of hydrogen gassuitable for flowing through the reaction chamber as a carrier gasduring epitaxial silicon deposition, a source of silicon-containing gas,and a source of a gaseous oxidizing agent suitable for thermal growth ofsilicon dioxide from a silicon layer. Gas lines connect the sources ofgases to the reaction chamber.

In accordance with another aspect of the invention, a chemical vapordeposition reactor includes a process chamber with a gas inlet and a gasoutlet. A first gas line communicates hydrogen gas between a hydrogencontainer and the gas inlet. A second gas line communicates a mixture ofO₂ and a non-reactive gas between an oxidant source container and thegas inlet. The level of oxygen in oxidant source container isnon-explosive in the presence of any amount of hydrogen under operatingconditions of the process chamber.

In accordance with another aspect of the invention, a method ofprocessing semiconductor substrates includes forming an epitaxial layercontaining silicon in a chemical vapor deposition chamber and forming anoxide layer over the epitaxial layer within the chamber.

In accordance with another aspect of the invention, a method offabricating integrated circuits on a semiconductor substrate includesloading the substrate into a chemical vapor deposition processingchamber. An epitaxial silicon layer is deposited on at least part of thesubstrate within the chamber. A thermal oxide layer is grown over theepitaxial silicon layer within the chamber, and a polysilicon layer isdeposited over the thermal oxide layer, also within the chamber.

In accordance with another aspect of the invention, a method ofprocessing a semiconductor substrate includes loading the substrate intoa chemical vapor deposition chamber. An oxidant source gas including O₂is introduced into the chamber, and an oxide is grown from a siliconsurface of the substrate. The flow of the oxidant source gas is shutoff, and the oxidant source gas purged from the chamber with a gascontaining hydrogen.

In accordance with another aspect of the invention, a method of forminglayers over a semiconductor substrate in a single substrate reactorincludes loading the substrate into a single-substrate reaction chamber.An oxide layer is grown over the substrate, within the reaction chamberat about atmospheric pressure, by exposing a top surface of thesubstrate to an oxidant. A silicon layer is deposited, within thereaction chamber at about atmospheric pressure, directly on the oxidelayer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and further aspects of the invention will be readily apparent tothe skilled artisan from the following description and the attacheddrawings, wherein:

FIG. 1 is a schematic sectional view of an exemplary single-substratereaction chamber;

FIG. 2 is a gas flow schematic, illustrating gas sources in accordancewith a preferred embodiment of the present invention;

FIG. 3 is a flow chart generally showing steps for treating substratesin accordance with the preferred embodiments;

FIG. 4 is a partial schematic section of a substrate processed inaccordance with a preferred embodiment; and

FIG. 5 is a three dimensional graph, illustrating the effect of silaneflows and temperature upon oxide sublimation.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

While the preferred embodiments are discussed in the context ofsingle-substrate, epitaxial silicon deposition, it will be understoodthat certain aspects of the invention will have application tonon-epitaxial layers and deposition reactors of other types.Furthermore, while a series of process steps are disclosed herein fortreating a single substrate, one of ordinary skill in the art willrecognize the utility of certain of the disclosed steps even in theabsence of some of the disclosed steps.

Preferred Reactor

FIG. 1 shows a chemical vapor deposition (CVD) reactor 10, including aquartz process or reaction chamber 12, constructed in accordance with apreferred embodiment, and for which the methods disclosed herein haveparticular utility. The illustrated reactor 10 is specifically designedto optimize epitaxial deposition of silicon on a single substrate at atime, though it can also be employed for CVD of a number of differenttypes of layers, as will be apparent from the discussion of FIG. 3,hereinbelow.

A plurality of radiant heat sources are supported outside the chamber12, to provide heat energy to the chamber 12 without appreciableabsorption by the quartz chamber 12 walls. While the preferredembodiments are described in the context of a “cold wall” CVD reactorfor processing semiconductor wafers, it will be understood that theprocessing methods described herein will have utility in conjunctionwith other heating/cooling systems, such as those employing inductive orresistive heating.

The illustrated radiant heat sources comprise an upper heating assemblyof elongated tube-type radiant heating elements 13. The upper heatingelements 13 are preferably disposed in spaced-apart parallelrelationship and also substantially parallel with the reactant gas flowpath through the underlying reaction chamber 12. A lower heatingassembly comprises similar elongated tube-type radiant heating elements14 below the reaction chamber 12, preferably oriented transverse to theupper heating elements 13. Desirably, a portion of the radiant heat isdiffusely reflected into the chamber 12 by rough specular reflectorplates above and below the upper and lower lamps 13, 14, respectively.Additionally, a plurality of spot lamps 15 supply concentrated heat tothe underside of the wafer support structure (described below), tocounteract a heat sink effect created by cold support structuresextending through the bottom of the reaction chamber 12.

Each of the elongated tube type heating elements 13, 14 is preferably ahigh intensity tungsten filament lamp having a transparent quartzenvelope containing a halogen gas, such as iodine. Such lamps producefull-spectrum radiant heat energy transmitted through the walls of thereaction chamber 12 without appreciable absorption. As is known in theart of semiconductor processing equipment, the power of the variouslamps 13, 14, 15 can be controlled independently or in grouped zones inresponse to temperature sensors.

A substrate, preferably comprising a silicon wafer 16, is shownsupported within the reaction chamber 12 upon a substrate or wafersupport structure 18. Note that while the substrate of the illustratedembodiment is a single crystal silicon wafer, it will be understood thatthe term “substrate” broadly refers to any surface on which a layer isto be deposited. Moreover, cleaning and prevention of contamination isoften required in depositing layers on other substrates, including,without limitation, the deposition of optical thin films on glass orother substrates.

The illustrated support structure 18 includes a wafer holder 20, uponwhich the wafer 16 rests, and a support spider 22. The spider 22 ismounted to a shaft 24, which extends downwardly through a tube 26depending from the chamber 12 lower wall. Preferably, the tube 26communicates with a source of purge gas which can flow duringprocessing, inhibiting process gases from escaping to backside of thewafer 16.

A plurality of temperature sensors are positioned in proximity to thewafer 16. The temperature sensors may take any of a variety of forms,such as optical pyrometers or thermocouples. The number and positions ofthe temperature sensors are selected to promote temperature uniformity,as will be understood in light of the description below of the preferredtemperature controller. Preferably, however, the temperature sensorsdirectly or indirectly sense the temperature of positions in proximityto the wafer.

In the illustrated embodiment, the temperature sensors comprisethermocouples, including a first or central thermocouple 28, suspendedbelow the wafer holder 20 in any suitable fashion. The illustratedcentral thermocouple 28 passes through upon the spider 22 in proximityto the wafer holder 22. The reactor 10 further includes a plurality ofsecondary or peripheral thermocouples, also in proximity to the wafer16, including a leading edge or front thermocouple 30, a trailing edgeor rear thermocouple 31, and a side thermocouple 31 (not shown). Each ofthe peripheral thermocouples are housed within a slip ring 32 whichsurrounds the wafer holder 20 and wafer 16. Each of the central andperipheral thermocouples are connected to a temperature controller,which sets the power of the various heating elements 14 in response tothe readings of the thermocouples.

In addition to housing the peripheral thermocouples, the slip ring 32absorbs and emits radiant heat during high temperature processing, suchthat it compensates for a tendency toward greater heat loss orabsorption at wafer edges, a phenomenon which is known to occur due to agreater ratio of surface area to volume in regions near such edges. Byminimizing edge losses and the attending radial temperaturenon-uniformities across the wafer 16, the slip ring 32 can reduce therisk of crystallographic slip. The slip ring 32 can be suspended by anysuitable means. For example, the illustrated slip ring 32 rests uponelbows 34 which depend from a front chamber divider 36 and a rearchamber divider 38. The dividers 36, 38 desirably are formed of quartz.

The illustrated reaction chamber 12 includes an inlet port 40 for theinjection of reactant and carrier gases, and the wafer 16 can also bereceived therethrough. An outlet port 42 is on the opposite side of thechamber 12, with the wafer support structure 18 positioned between theinlet 40 and outlet 42.

An inlet component 50 is fitted to the reaction chamber, adapted tosurround the inlet port 40, and includes a horizontally elongated slot52 through which the wafer 16 can be inserted. A generally verticalinlet 54 receives gases from remote sources, as will be described morefully with respect to FIG. 2, and communicates such gases with the slot52 and the inlet port 40. The inlet 54 can include gas injectors asdescribed in U.S. Pat. No. 5,221,556, issued Hawkins et al., or asdescribed with respect to FIGS. 21-26 in U.S. patent application Ser.No. 08/637,616, filed Apr. 25, 1996, the disclosures of which are herebyincorporated by reference. Such injectors are designed to maximizeuniformity of gas flow for the single-wafer reactor.

An outlet component 56 similarly mounts to the process chamber 12 suchthat an exhaust opening 58 aligns with the outlet port 42 and leads toexhaust conduits 60. The conduits 60, in turn, communicate with suitablevacuum means (not shown) for drawing process gases through the chamber12. In the preferred embodiment, process gases are drawn through thereaction chamber 12 and a downstream scrubber without the aid of a pump.While, in other arrangements, a pump or fan may be included to aid indrawing process gases through the chamber 12, the preferred reactor isnot configured as a vacuum chamber as that term is understood in the artof chemical vapor deposition.

Wafers are preferably passed from a handling chamber (not shown), whichis isolated from the surrounding environment, through the slot 52 by apick-up device. While a fork or paddle can serve as the handling device,the preferred pick-up device comprises a wand which shoots high velocitystreams of gas at angles, as described in U.S. Pat. No. 4,846,102, thedisclosure of which is hereby incorporated by reference. When broughtclose to the top of a wafer surface, the gas streams create a lowpressure zone above the wafer, causing the wafer to lift. The handlingchamber and the processing chamber 12 are preferably separated by a gatevalve (not shown) of the type disclosed in U.S. Pat. No. 4,828,224, thedisclosure of which is hereby incorporated by reference.

The total volume capacity of single wafer process chambers designed forprocessing 200 mm wafers, for example, is preferably less than about 30liters, more preferably less than about 20 liters, and most preferablyless than about 10. The illustrated chamber has a capacity of about 7.5liters. Because the chamber 12 is divided by the dividers 32, 38, waferholder 20, ring 32, and the purge gas flowing from the tube 26, however,the effective volume through which process gases flow is around half thetotal volume (about 3.77 liters in the illustrated embodiment). Ofcourse, it will be understood that the volume of the single-waferprocess chamber 12 can be different, depending upon the size of thewafers meant to be processed therein. For example, a single-waferprocessing chamber of the illustrated type, but for 300 mm wafers,preferably has a capacity of less than about 100 liters, preferably lessthan about 60 liters, and more preferably less than about 30 liters. One300 mm wafer processing chamber has a total volume of about 24 liters,with an effective processing gas capacity of about 11.83 liters.

As indicated in FIG. 3, a first step in the preferred method is to loada single wafer in the reaction chamber 12 (FIG. 1). As noted in the“Background” section above, the purity of a substrate surface cancritically affect the quality of a layer deposited thereon, particularlyfor epitaxial deposited layers. A common source of contamination ofsemiconductor substrates is native oxide, which naturally forms on nakedsilicon surfaces upon exposure to the atmosphere. Carbon contaminantsalso tend to be found at the surface of semiconductor wafers, asreceived from wafer suppliers.

Such exposure and contamination is inevitable in transporting wafersfrom vendors to fabrication facilities, and transporting wafers amongprocessing equipment. Typically, for example, polished silicon wafersare provided by independent suppliers. Yet another set of suppliersoften obtain wafers, apply epitaxial layers, and furnish these wafers tofabrication facilities. Even when epitaxial layers and later fabricationsteps performed at the same facility, wafers are often exposed toatmospheric contaminants and plastic handling equipment betweenprocessing steps in different parts of the facility.

One method of removing native oxide is to expose the substrate tohydrogen in high temperature bake or anneal steps. Silicon dioxide(SiO₂) at the substrate surface tends to sublimate as SiO, leaving aclean substrate surface ready for epitaxial deposition. Such hydrogenbake steps have generally been effective only at relatively hightemperatures for long periods of time (e.g., at about 1200° C. for about90 seconds). The high temperatures and long exposures are believed to berequired to diffuse carbon contaminants into the substrate bulk and awayfrom the surface small temperature non-uniformities during such hightemperature steps can itself cause crystallographic slip, ordislocations. Furthermore, ramping the temperature up to hydrogen annealtemperatures and then back down to epitaxial deposition temperaturesadds to production time and costs for each wafer processed.

Traditional alternatives to hydrogen annealing include hydrofluoric acid(HF) wet pre-cleaning, or HF vapor etches. However, the extra handlingand process steps necessitated by ex situ processes raise productiontimes and costs considerably, while fluorine processes are incompatiblewith most cold-wall (quartz chamber) reactors.

U.S. Pat. No. 3,926,715, issued to Süssmann, discloses another method ofcleaning silicon substrates prior to epitaxial deposition. In thecontext of batch processing reactor, Süssmann discloses oxidizing andannealing multiple silicon wafers at high temperatures. Total exposureto these high temperature steps, however, is about 7 to 22 minutes. Asnoted above, the high likelihood of small temperature non-uniformitiesduring such extended high temperature steps tends to producecrystallographic slip to an extent unacceptable for today's high densitycircuitry.

Moreover, use of oxygen and hydrogen in the same reactor creates aserious risk of explosion. While flowing purge gas between oxygen stepsand hydrogen steps may be effective for the reactor type disclosed inSüssmann, it is unlikely to be so effective for the single-wafer reactordesign illustrated in FIG. 1. Even a spark or minor explosion caused byresidual H₂ gas (trapped, for example, below dividers 36, 38) whileflowing oxygen, or vice versa, can destroy the quartz walls of thecold-wall chamber 12. Traditionally, therefore, concurrent or evensequential use of oxygen and hydrogen within a single-wafer chamber hasnot been considered commercially feasible, particularly within epitaxialreactors, for which high flow rates of hydrogen are typically used forcarrier gas, purging, and oxide sublimation. Risk of explosion throughinteraction of oxidants with H₂ is also particularly high foratmospheric pressure CVD reactors, as compared to vacuum chambers.

FIG. 2 shows a gas line schematic, in accordance with the preferredembodiment. The reactor 10 is provided with a source 70 of oxidizingagent or oxidant. The oxidant source 70 can comprise any of a number ofknown oxidants, such as NO, H₂O, N₂O, or HCOOH, HClO₃, and particularlya volatile oxidant, but most preferably comprises oxygen gas (O₂), suchas can be utilized for high quality dry oxidation. The preferred oxidantsource 70 comprises a tank or other container holding a mixture of anoxidant and a non-reactive gas, such as N₂, more preferably a noble orinert gas such as Ar, He or Ne. The mixture in the preferred oxidantsource 70 is such that it is non-explosive even if the non-reactive gaswere replaced with pure hydrogen. Such a mixture will be non-explosivewhen mixed in any composition with pure hydrogen (H₂).

In particular, the percentage of oxidant in the mixture is less than theexplosive limit for mixtures of the oxidant with H₂. For oxygen gas, theexplosive limit is about 6.1% O₂ by volume at room temperature andatmospheric pressure. It will be understood that at differenttemperature and pressure conditions, the explosive limit will differslightly from that given above, and can be readily obtained forparticular reactor conditions by one of skill in the art.

Below the explosive limit, the mixture of O₂ and inert gas will notexplode even if all of the inert gas is replaced with H₂. Accordingly,the stored mixture is “safe” when attached to a reactor with high H₂flow rates, even operated at atmospheric pressure, and even if MFCs orgas valves should fail. The oxidant mixture 70 can be mixed with anyamount of pure H₂ and remain non-explosive, as the additional gas canonly dilute the oxidant level.

The lower limit for the percentage of oxidant depends upon its intendeduse and time acceptable for oxidation, but can be as low as 0.1% (forpre-epitaxial cleaning, e.g., as will be understood from the discussionof FIG. 3). For other uses (e.g., growth of a high quality gate oxide),the oxidant source 70 should include at least about 1% O₂. Morepreferably, the oxidant source 70 includes at least 2% O₂. Mostpreferably, the oxidant mixture 70 is as close as possible to theexplosive limit for the given conditions without exceeding it.

Accordingly, the oxidant source for the preferred reactor conditionspreferably comprises less than about 6% O₂ in a mixture with a noblegas, and particularly between about 1% and 5% O₂.

As also shown in FIG. 2, the reactor 10 further includes a source 72 ofhydrogen gas (H₂). As is known in the art, hydrogen is a useful carriergas and purge gas because it can be provided in very high purity, due toits low boiling point, and is compatible with silicon deposition. Asource 73 of nitrogen gas is also shown. As is known in the art, N₂ canbe used as a carrier or purge gas for many processes.

A source 74 of silicon-containing gas is also shown. The silicon sourcegas can comprise, for example, silane or dichlorosilane (DCS),trichlorosilane (TCS), or other known silicon sources. The illustratedsilicon source 74 includes a bubbler and a gas line for bubbling H₂through a liquid silicon source such as the illustrated TCS, to moreeffectively transport silicon to the reaction chamber in gaseous form.

Desirably, the reactor 10 will also include other source gases such asdopant sources (e.g., the illustrated phosphine 76, arsine 78 anddiborane 80 sources) and etchants for cleaning the reactor walls (e.g.,HCl source 82). Additional illustrated source gases include a germaniumsource 84, which can be utilized for doping or formation of SiGe films,and a silane source 86, which may be used for deposition of silicon(polycrystalline, amorphous or epitaxial, depending upon depositionparameters). While not shown, a source of ammonia (NH₃) can also beprovided.

Each of the gas sources may be connected to the inlet 54 (FIG. 1) viagas lines with attendant safety and control valves, as well as mass flowcontrollers (“MFCs”) which are coordinated at a gas panel. Process gasesare communicated to the inlet 54 (FIG. 1) in accordance with directionsprogrammed into a central controller and distributed into the processchamber 12 through injectors. After passing through the process chamber,unreacted process gases and gaseous reaction by-products are exhaustedto a scrubber 88 to condense environmentally dangerous fumes beforeexhausting to the atmosphere.

Substrate Cleaning Process

Referring again to FIG. 3, after the wafer is loaded 100 into thepreferred reactor processing chamber, the gate valve is closed andprocess gases can be injected into the process chamber. In accordancewith the illustrated embodiment, a first process is to grow 102 asacrificial oxide. In the preferred reactor 10 (FIGS. 1 and 2),sacrificial oxidation and each of the disclosed processes is conductedat about atmospheric pressure. Slight pressure differentials due to gasflow are of negligible effect.

Prior to flowing process gases for reaction in the first process,however, purge gas is preferably flowed through the chamber to removeany atmospheric contaminants which may have been introduced through thegate valve during loading of the substrate. Desirably, H₂ is flowed fromthe inlet port 40 to the outlet port 42, as well as through thedepending tube 26 to the underside of the wafer holder 20 (see FIG. 1).An exemplary H₂ flow rate is about 45 slm.

During purging, the temperature of the substrate can be ramped to thedesired process temperature by increasing power output to the lamps 13,14, 15. Preferably, the sacrificial oxidation 102 is conducted betweenabout 700° C. and 1100° C., more preferably between about 800° C. and1000° C. Since the sacrificial oxide is to be removed and the thicknessis not critical, temperature ramping can also be performed duringoxidation 102.

The oxidizing agent is introduced to the reaction chamber in anon-explosive mixture. An oxidant source such as pure O₂, for example,can be introduced with the flowing H₂ gas serving as the carrier, suchthat the ratio of O₂:H₂ is below the explosive limit for the givenconditions.

Preferably, however, the oxidant is stored in a safe mixture with anon-reactive gas, as disclosed above with respect to FIG. 2, such thatthe mixture would be non-explosive even if all of the non-reactive gaswere replaced with H₂. In this way, the oxidant source is safe even inthe face of failures by mass flow controllers or valve integrity. Thegas from this safe oxidant source 70 (FIG. 2) can be flowed with orwithout shutting off the H₂ flow. However, the H₂ flow is preferablyshut off during the oxidation, resulting in less diluted oxidant in theflow and consequently higher oxidation rates. Significantly, even if H₂flow is shut off, the H₂ does not need to be purged with inert gasbefore introducing the oxidant to the reaction chamber, and theoxidation 102 can begin immediately.

In one embodiment, HCl or other chlorine-containing vapor is added tothe oxidant flow, to aid in removal of metal contaminants from thesubstrate surface. Alternatively, HCl can be added to the hydrogen bakestep, described below, for the same purpose.

The oxidation 102 proceeds long enough to clean contaminants from thesurface of the substrate. In particular, surface carbon is burned off asCO₂ or CO during the oxidation 102. The targeted oxide thickness isbetween about 0.5 Å and 100 Å, more preferably between about 0.5 Å and20 Å, and most preferably between about 1 Å and 5 Å. Preferably, theoxidant is flowed for about 2 seconds to 60 seconds, depending upon thechosen temperature and oxidant concentration. One of ordinary skill inthe art can optimize the length of time or oxide thickness required forthe oxidation 102 to sufficiently clean the substrate of contaminantswithout wasteful oxide growth.

Referring again to FIG. 3, the sacrificial oxide grown by the previouslydescribed process is then removed or etched in a sublimation processwithin the same chamber. The preferred sublimation comprises a hydrogenbake or anneal 104, in which the silicon oxide is subjected to hydrogenflow at elevated temperatures.

In accordance with the preferred embodiment, the overall time requiredfor initiation and performance of the hydrogen bake 104 is minimized bymany factors. Preferably, the substrate on which the oxide is grown isnot removed from the process chamber 12 between oxidation 102 andhydrogen bake 104. Additionally, when the oxidant flow is shut off, theoxidant need not be purged with an inert gas in a separate step. Rather,due to the safe mixture of the preferred oxidant, the oxidant can bepurged with hydrogen, which immediately begins the sublimation process.The hydrogen bake can also be conducted within the same temperaturerange as the oxidation, if desired, such that temperature ramping is notnecessary. On the other hand, increasing temperature during the hydrogenbake will increase the rate of sublimation. One of ordinary skill in theart can optimize the process temperature to maximize wafer throughput bydetermining, for different temperatures in a particular system, the timerequired for each of temperature ramping and sublimation.

Because carbon has been burned off during the oxidation 102, thehydrogen bake need only evaporate the oxide and can thus be conductedrapidly and at lower temperatures than conventional atmospheric pressurehydrogen bakes. Preferably, the hydrogen bake is conducted below 1150°C. More preferably, the hydrogen bake is conducted at between about 900°C. and 1070° C. for between about 10 seconds and 60 seconds, dependingon the oxide thickness.

The rate of sublimation has been found to depend upon hydrogen baketemperature and upon the purity (i.e., level of oxidant partialpressure) of the reducing environment. Most preferably, the hydrogen ispure enough to contain less than about 1 part per billion (ppb) ofoxidants. Such purity of the reducing environment can be accomplished,in alternative arrangements, by vacuum pumping the process chamber toabout 10⁻⁷ to 10⁻⁶ Torr. For the preferred atmospheric reactor, pure H₂can be obtained through evaporation from cryogenic sources, and thereactor chamber can be effectively sealed from the surrounding “cleanroom” to provide the desired level of reducing environment purity.

With a reducing environment containing less than about 1 ppb oxidants,an oxide of about 10 Å, the bake step can be completed at 900° C. inonly about 10 seconds. Alternatively, with a reducing environmentcontaining greater than about 7 parts per million (ppm) of oxidants,sublimation of 10 Å oxide can be completed at about 1070° C. in about 10seconds. Similarly, higher temperatures can compensate for higher levelsof oxidant leakage into the chamber. Preferably, the oxidant level iskept at least below about 0.1% by volume in the process chamber duringhydrogen baking 104.

With reference to FIG. 5, the addition of small concentrations of silaneor germane to the H₂ flow can speed the sublimation 104 even further.FIG. 5, for example, illustrates the effect of silane flows andtemperature upon the sublimation process. As is readily apparent, forany given silane flow rate (including zero), an increase in temperatureincreases the rate of sublimation, or oxide etching. At low temperatures(e.g., below about 900° C.), increasing silane flows leads topolysilicon deposition, represented by negative numbers on the verticalaxis. At high temperatures (above about 900° C.), on the other hand, theaddition of silane increases the rate of sublimation, indicated bypositive numbers on the vertical axis.

The hydrogen bake 104 leaves a clean substrate surface for furtherprocessing. Carbon is burned off during oxidation 102, while the grownoxide is cleaned during the hydrogen bake 104 by two possible reactions:SiO₂+H₂→SiO+H₂OSiO₂+Si→2SiO

The reactions thus convert the sacrificial oxide to H₂O or SiO vapor,which is exhausted from the process chamber. The substrate surface isthus cleaned of carbon, oxide, and metal impurities can also be removedif HCl is added to either of the oxidation 102 or hydrogen bake 104processes.

Epitaxial Deposition

In accordance with the preferred embodiments, a silicon source gas isthen introduced to initiate deposition 106 of a semiconductor layer, andin particular of an epitaxial silicon layer. H₂ flows as a carrier gas.In the illustrated embodiment, the epitaxial layer is deposited 106 uponthe substrate within the same process chamber 12 (FIG. 1), and withoutremoving the substrate from the chamber 12 after the hydrogen bake 104.

As is known in the art, epitaxial deposition is a CVD process wherebythe deposited layer grows in conformity with the crystal structure ofthe underlying layer. Temperature ranges and deposition rates depend ingeneral upon the source gas used and other reactor conditions, but ingeneral epitaxy is effected by silane (SiH₄) between about 900° C. and1150° C., by dichlorosilane (DCS or SiH₂Cl₂) between about 1000° C. and1100° C., or by trichlorosilane (TCS or SiHCl₃) between about 1050° C.and 1150° C. Significantly, for any of the above silicon sources, theepitaxial deposition 106 can be conducted at the same temperature orhigher than the preferred sublimation process 104. Thus, time and energyneed not be wasted in elevating the temperature to a high level forhydrogen baking, and then reducing the temperature again for epitaxy.

It will be understood by one of skill in the art that epitaxialsemiconductor layers can be intrinsic or in situ doped, selective ornon-selective, and can comprise silicon or silicon germanium.

An exemplary epitaxial deposition comprises forming about 3 μm ofepitaxial silicon on the substrate by flowing 15 g/min of TCS in a 45slm flow of H₂ carrier for about 45 seconds, with the substratetemperature at about 1120° C. A dopant gas can also be added to the flowto achieve a background dopant level for devices to be formed in thelayer in subsequent processing steps. Reactant gases are shut off when alayer of sufficient thickness has formed. H₂ can continue to flow untilthe reactant gases are purged from the chamber.

The resultant epitaxial layer has a contaminant-free,hydrogen-terminated surface (i.e., hydrogen occupies otherwise availablevalence electrons of surface silicon atoms), which protects the layerfrom absorbing any contaminants.

Post-Epitaxial Oxidation and Chamber Cleaning

In accordance with one aspect of the invention, the surface can be keptclean by performing an oxidation 108 to grow a protective layer over theepitaxial layer within the same process chamber 12 (FIG. 1). Inaccordance with the illustrated embodiment, the protective layercomprises a thermally grown oxide over the epitaxial layer. As will beclear from the two subsections below, the oxide may serve simply as aprotective layer, or can additionally serve as a gate dielectric layerfor transistors to be fabricated.

To maintain the purest possible epitaxial layer, the oxidation 108 isperformed in situ, i.e., without removing the substrate from the processchamber 12 in which the epitaxial layer was formed. Furthermore, growinga protective oxide in situ, i.e., without removing the substrate fromthe chamber, will greatly improve wafer throughput. Preferably,therefore, the oxide layer is grown in situ.

Such in situ oxide growth, however, may come at the expense of increasedchamber cleaning costs. Residue from silicon source gases is generallyleft on surfaces of the reaction chamber 12 after the epitaxialdeposition 106. In the past, such residues have been removed with simpleHCl vapor etch steps between depositions. Without frequent cleaning, theresidue can cloud the quartz reactor walls through which radiant heatmust pass for normal operation. Exposing the residue to an oxidationstep before the etch step, however, tends to harden the residue,requiring more harmful or costly cleaning steps. Ex situ acid washingthe coated surfaces, for example, entails considerable costs indismantling the process chamber, not to mention the costs of reactordown time during ex situ cleaning of reactor components.

Accordingly, after oxidation 108 and any further processing to beperformed within the chamber, the wafer can be removed from the processchamber 12 (FIG. 1), the gate valve closed, and etchants introduced toclean the oxidized or hardened residue. Preferably, NF₃ and/or C₂F₆ isflowed for a post-oxidation chamber wall cleaning. After the cleaningcycle is complete, the etchants are purged from the reaction chamber 12,the gate valve is opened, and a new wafer can be loaded into thereaction chamber 12.

Alternatively, the substrate with the epitaxial layer can be temporarilyremoved from the process chamber 12 (FIG. 1) after epitaxial deposition106, so that the chamber 12 can be subjected to a standard HCl etchcycle. For this alternative process, the substrate is moved to a loadlock chamber (not shown), specifically the wafer handling chamberoutside the reaction chamber 12, which is isolated from the clean roomenvironment. The load lock chamber is relatively free from contaminantsand preferably purged with an inert gas such as hydrogen or nitrogen.The atmosphere in the load lock chamber is thus more pure than that ofthe clean room which surrounds the reactor.

In accordance with this alternative arrangement, the wafer with theepitaxial layer is transported to the wafer handling chamber by a pickup device which minimizes risk of damage or contamination of thesubstrate. The preferred pick-up device, described above, shoots highvelocity streams of gas outwardly from a downward-facing surface. Use ofH₂ for the pick-up wand gas streams is preferred, since hydrogen ischemically compatible with the silicon layer to be protected, and cantypically be provided in greater purity (i.e., fewer contaminants) thannitrogen. Not only does the preferred pick-up device avoid directcontact with the wafer, but the continual shower of hydrogen gasprotects the silicon surface from contamination and maintains thehydrogen-termination.

The substrate can be maintained upon the pick-up device or on a stagingstation within the load lock chamber while the chamber is cleaned. Inthe interim, the gate valve to the reaction chamber remains closed.After the cleaning cycle is complete, the etchants are purged from thereaction chamber 12, the gate valve is opened, and the substrate isreturned to the reaction chamber 12 from the load lock chamber.

Protective Layer Oxidation

The oxide can serve solely as a protective layer, in accordance with oneembodiment. For such use, the oxidation 108 should be conducted until alayer is formed of sufficient thickness to inhibit any contaminationfrom diffusing through the oxide to the silicon surface prior toconducting the next processing step, under normal handling conditions.Preferably, a protective oxide should be between about 20 Å and 200 Å,more preferably between about 30 Å and 100 Å.

As noted above, in situ oxidation 108 is preferred, in order to maximizewafer throughput. After the epitaxial layer has been deposited 106, theoxidizing agent is again turned on. The H₂ and silicon source gas neednot be purged in a separate step. Rather, the oxidant, in a safe mixturewith an inert gas, can perform the purging while immediately beginningthe oxidation 108.

Desirably, the oxidation 108 comprises a high quality dry oxidation, andcan be grown to any desired thickness, depending upon its intended use.Parameters for the oxidation 108 can be as described with respect to thesacrificial oxidation 102, except for desirably longer oxidation times.As is known, HCl can be added in small amounts to the flow, to improvethe quality of the resultant oxide layer.

After formation of such a protective oxide layer, oxidant flow is turnedoff, and the substrate can be removed 110 to remote sites for furtherprocessing. During handling and transportation through normal clean roomenvironments, the epitaxial silicon surface is kept sealed beneath theprotective oxide.

Gate Dielectric Oxidation

In accordance with another embodiment, the oxidation 108 can not onlyprotect the underlying semiconductor layer from contamination, but alsoforms a gate dielectric over the epitaxial layer formed by deposition106. As with the previously described embodiment, the oxidation 108 inaccordance with this embodiment is preferably performed in situ, i.e.,without removing the substrate from the processing chamber after theepitaxial deposition. There is thus little or no chance forcontamination of the epitaxial layer prior to formation of the gateoxide. The base layer in which transistors will be built thus remains ofhigh quality, and the oxide/epitaxial layer interface can be free ofcharge-trapping sites. Furthermore, by growing the oxide in the samechamber as the epitaxial layer, several steps can be avoided, such astransportation and cleaning prior to forming a gate oxide with differentequipment.

Oxidation for creating a gate oxide can be as described above, althoughgate oxides are also frequently formed with NO or N₂O, which would beprovided in a safe mixture, as described with respect to the preferredO₂/Ar mixture. As described with respect to the oxidation 108 forforming a protective layer, HCl can be added to the oxidant flow toimprove oxide quality.

For this embodiment, regardless of the particular oxidant, oxidation 108is extended until a thermal oxide is formed of sufficient thickness foruse as a gate oxide. Currently, gate oxides are greater than about 20 Å,and tend to be between about 40 Å and 60 Å. As critical dimensionscontinue to shrink, future gate oxides may be about 25 Å to 30 Å. Gatesdesigned to allow quantum tunneling, such as for EPROMS, can be thinnerstill.

Most preferably, oxidation 108 in accordance with a gate dielectricembodiment is followed by a post-oxidation anneal 111. In particular, ahigh temperature ammonia (NH₃) anneal nitridizes the oxide surface,thereby reducing the oxide's boron (or other dopant) diffusioncoefficient, as is known in the art. Advantageously, the safe mixture ofoxidant 70 (FIG. 2) can be purged with ammonia to immediately begin theanneal, even though ammonia would be explosive when mixed with higheroxidant concentrations.

Gate Conductor Deposition

If the oxidation 108 is used for formation of a gate oxide, a conductivegate layer can also be formed 112 within the same process chamber. Gateconductors typically comprise polysilicon, at least as a first layerover the gate oxide. As the preferred reactor 10 includes a gaseoussilicon source and gas line to the process chamber 12, formation of thesilicon layer in situ would be advantageous over transporting thesubstrate 16 to other equipment for deposition.

Accordingly, after oxidation 108 to produce an oxide suitable for use asa transistor gate dielectric, a polysilicon layer is deposited 112 overthe oxide layer. It will be understood that the polysilicon isconsidered directly deposited over the oxide layer, even though the gateoxide is slightly nitridized in accordance with the preferredpost-oxidation ammonia anneal 111. Preferred parameters for thepolysilicon deposition 112 comprises flowing 350 sccm silane and 45 μmof H₂, with the substrate heated to about 650° C. Desirably, thepolysilicon layer is also in situ doped for conductivity. The chambercan be maintained at about atmospheric pressure. Under such conditions,a polysilicon layer of about 1,000 Å can formed in about 90 seconds.

After formation of the polysilicon layer, the wafer 16 is transferred toother semiconductor processing equipment for further processing, such asthe application of metal strap layers, photolithography and etching todefine gates, formation of insulative spacers, self-aligned doping ofsource and drain regions, metallization steps, etc.

Preferred Structures

FIG. 4 illustrates a wafer 16 after processing in accordance with FIG.3, including the polysilicon deposition 112. The wafer 16 includes fieldoxide regions 120, defining active area regions. These field oxides 120are formed outside the preferred reactor in any suitable manner, such asLOCOS, trench fill, or various modifications or combinations of theseprocesses. An epitaxial layer 122 extends the substrate crystalstructure in one of the active regions. The epitaxial layer 122 ispreferably background doped either n-type or p-type, selectivelydeposited over the exposed silicon substrate 16 between field oxideregions 120. A high quality gate oxide 124 is formed directly over theepitaxial layer 122, with a clean interface therebetween. A polysilicongate layer 126 is formed directly over the oxide 124, preferably dopedfor conductivity.

All of layers 122, 124 and 126 can be formed sequentially within thesame single wafer CVD reactor. All three layers are preferably formedwithout removing the wafer from the processing chamber 12 (FIG. 1).Alternatively, the layers can be formed without removing the wafer fromthe reactor 10, but the wafer is removed from the processing chamber 12to a load lock chamber between deposition 106 of the epitaxial layer 120and growth of the gate oxide 122, to allow cleaning of the processchamber surfaces. In either case, little chance for contamination ispresented between formation of the various layers. The processesdisclosed herein, and the apparatus for practicing these processes,provide many advantages over conventional processes. The sacrificialoxidation and annealing provides clean substrate surfaces immediatelyprior to formation of epitaxial layers. Not only is the process cleanerthan ex situ alternatives, since it can be performed in situ, but theprocess is less expensive than alternatives. Aside from shorterprocessing times, time between processes is minimized by the ability tosafely purge hydrogen with oxidant source gases, oxidant sources gaseswith hydrogen, oxidant source gases with ammonia, etc.

As a result of the pre-clean, high quality layers, and particularlyepitaxial silicon layers, can be formed on the cleaned substrate. Thepreferred process also provides a method of keeping the surface of suchlayers clean. Since epitaxial layers are often the base layer in whichlogic devices (e.g., transistors) for integrated circuits are made, thecleaner epitaxial layers produced by the methods disclosed herein canreduce device failure and improve yields for IC fabrication.

Conducting several consecutive processes in the same processing tool orreactor also improves wafer throughput, and hence production costs,considerably. As disclosed herein, three layers of an integrated circuitcan all be formed in the same reactor. Furthermore, these layers(epitaxial silicon, gate oxide, and polysilicon gate layers) can beformed in a single-wafer processing chamber, with the attendant highdegree of process control.

It will be appreciated by those skilled in the art that variousmodifications and changes may be made without departing from the scopeof the invention. For example, gate oxide growth 108 in a single waferCVD reactor, followed by in situ formation 112 of a conductive gatelayer, can be advantageous even without previous deposition of anepitaxial layer. Similarly, wafers can be cleaned within the preferredreactor by the disclosed sacrificial oxidation 102 and in situ hydrogenbake even without subsequent in situ layer formation. Similar othermodifications and changes are intended to fall within the scope of theinvention, as defined by the appended claims.

1. A silicon deposition reactor, comprising: a cold-wall,single-substrate chemical vapor deposition reaction chamber having areaction gas inlet and a reaction gas outlet defining a gas flow paththerebetween, wherein the reaction chamber has radiation transparentwalls, a maximum capacity of one substrate at a time, and an effectivecapacity of less than about 60 liters; a support for supporting asubstrate within the gas flow path in the reaction chamber without asubstrate boat; a container holding hydrogen gas; a source ofsilicon-containing gas; a container holding a mixture of oxygen dilutedwith a non-reactive gas, wherein the oxygen is in an amountnon-explosive in the presence of any concentration of hydrogen; gaslines connecting the containers of gases and the source ofsilicon-containing gas to the reaction chamber; and a controllerprogrammed to expose a substrate in the chamber to thesilicon-containing gas to form a silicon-containing epitaxial layer onthe substrate, the controller further programmed to subsequently stop aflow of the silicon-containing gas into the chamber and to expose theepitaxial layer in the chamber to the mixture of oxygen diluted with thenon-reactive gas after stopping the flow of the silicon-containing gas.2. The reactor of claim 1, wherein the mixture of oxygen contains lessthan about 6% oxygen by volume.
 3. The reactor of claim 2, wherein themixture of oxygen contains between about 1% and 5% oxygen.
 4. Thereactor of claim 2, wherein the non-reactive gas comprises a noble gas.5. The reactor of claim 1, wherein the gas lines comprise controllersconfigured to sequentially introduce the silicon-containing gas and themixture of oxygen diluted with the non-reactive gas into the reactionchamber.
 6. The reactor of claim 1, wherein walls of the reactionchamber comprise quartz.
 7. The reactor of claim 1, wherein thecontroller is further programmed to introduce the hydrogen gas into thereaction chamber immediately after flowing the mixture of oxygen dilutedwith the non-reactive gas into the reaction chamber.
 8. The reactor ofclaim 1, wherein the gas flow path is generally parallel to a depositiontarget surface of the substrate when the substrate is supported on thesupport.
 9. The reactor of claim 1, wherein the source ofsilicon-containing gas is a bubbler.
 10. The reactor of claim 9, whereinthe bubbler contains a liquid phase silane.
 11. The reactor of claim 10,wherein the silane is trichlorosilane.
 12. The reactor of claim 8,wherein the reaction chamber includes a divider parallel to thesubstrate an1d a purge gas inlet below the support, the purge gas inletconnected to a source of hydrogen gas.
 13. The reactor of claim 1,wherein the support supports a wafer up to about 200 mm in diameter andthe reaction chamber has an effective capacity of less than about 15liters.
 14. The reactor of claim 1, wherein the support supports a waferup to about 300 mm in.
 15. The reactor of claim 1, configured forchemical vapor deposition at atmospheric pressures.
 16. A chemical vapordeposition reactor, comprising: a cold wall, single substrate chemicalvapor deposition process chamber having at least one gas inlet and atleast one gas outlet, the process chamber having an effective capacityof less than about 60 liters and comprising: radiation transparentwalls; a maximum capacity of one substrate at a time; and a substrateholder for supporting the substrate without a substrate boat duringprocessing; an oxidant source container containing a mixture of oxygenand a non-reactive gas; a silicon source container containing a sourceof silicon precursor gas in gas communication with the process chamber;a first gas line communicating hydrogen gas between a hydrogen containerand the process chamber; a second gas line communicating the mixture ofoxygen and the non-reactive gas between the oxidant source container andthe process chamber, wherein the mixture contains a level of oxygenwhich is non-explosive in the presence of any amount of hydrogen underoperating conditions of the process chamber; and a controller programmedto expose a substrate in the chamber to the silicon-containing gas toform a silicon-containing epitaxial layer on the substrate, thecontroller further programmed to expose the epitaxial layer in thechamber to the mixture of oxygen diluted with the non-reactive gas. 17.The reactor of claim 16, wherein the controller is further programmed tointroduce the hydrogen gas into the process chamber immediately afterintroducing the mixture of oxygen and the non-reactive gas into theprocess chamber.
 18. The reactor of claim 16 wherein the silicon sourcecontainer holds a silane.
 19. The reactor of claim 18, wherein thesilane is selected from the group consisting of SiH₄, dichlorosilane andtrichlorosilane.
 20. The reactor of claim 16, wherein the oxidant sourcecontainer contains less than about 6% oxygen by volume.
 21. The reactorof claim 16, wherein the oxidant source container contains between about1% and 5% oxygen in an inert gas.
 22. The reactor of claim 16, whereinthe non-reactive gas comprises a noble gas.
 23. The reactor of claim 16,wherein the process chamber comprises a 200 mm single-wafer chamberhaving a volume less than about 30 liters.
 24. The reactor of claim 16,wherein the process chamber comprises a 300 mm single-wafer chamberhaving a volume less than about 100 liters.